IPD60R3K3C6ATMA1

IPD60R3K3C6ATMA1
Mfr. #:
IPD60R3K3C6ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 650V 1.7A DPAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD60R3K3C6ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
XPD60R3
Verpackung
Spule
Teil-Aliasnamen
IPD60R3K3C6 SP001117718
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
18.1 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
60 ns
Anstiegszeit
10 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
1.7 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Rds-On-Drain-Source-Widerstand
3.3 Ohms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
40 ns
Typische-Einschaltverzögerungszeit
8 ns
Qg-Gate-Ladung
4.6 nC
Tags
IPD60R3K3, IPD60R3K, IPD60R3, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
MOSFET N-CH 600V 1.7A TO252-3 / Trans MOSFET N-CH 650V 1.7A Automotive 3-Pin(2+Tab) DPAK T/R
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Teil # Mfg. Beschreibung Aktie Preis
IPD60R3K3C6ATMA1
DISTI # V72:2272_06391031
Infineon Technologies AGTrans MOSFET N-CH 650V 1.7A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2500
  • 1000:$0.3062
  • 500:$0.3279
  • 250:$0.3643
  • 100:$0.4048
  • 25:$0.5469
  • 10:$0.6856
  • 1:$0.8203
IPD60R3K3C6ATMA1
DISTI # V36:1790_06391031
Infineon Technologies AGTrans MOSFET N-CH 650V 1.7A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
0
    IPD60R3K3C6ATMA1
    DISTI # IPD60R3K3C6ATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 600V 1.7A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    On Order
    • 25000:$0.2369
    • 12500:$0.2420
    • 5000:$0.2513
    • 2500:$0.2699
    IPD60R3K3C6ATMA1
    DISTI # IPD60R3K3C6ATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 600V 1.7A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
    • 1000:$0.3067
    • 500:$0.3834
    • 100:$0.4850
    • 10:$0.6330
    • 1:$0.7200
    IPD60R3K3C6ATMA1
    DISTI # IPD60R3K3C6ATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 600V 1.7A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
    • 1000:$0.3067
    • 500:$0.3834
    • 100:$0.4850
    • 10:$0.6330
    • 1:$0.7200
    IPD60R3K3C6ATMA1
    DISTI # 20336743
    Infineon Technologies AGTrans MOSFET N-CH 650V 1.7A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant
    12500
    • 2500:$0.2129
    IPD60R3K3C6ATMA1
    DISTI # 31627991
    Infineon Technologies AGTrans MOSFET N-CH 650V 1.7A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant
    2500
    • 1000:$0.3176
    • 500:$0.3279
    • 250:$0.3643
    • 100:$0.4048
    • 30:$0.6006
    IPD60R3K3C6ATMA1
    DISTI # IPD60R3K3C6ATMA1
    Infineon Technologies AGTrans MOSFET N-CH 650V 1.7A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R3K3C6ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 25000:$0.2150
    • 15000:$0.2189
    • 10000:$0.2265
    • 5000:$0.2350
    • 2500:$0.2438
    IPD60R3K3C6ATMA1
    DISTI # 13AC9045
    Infineon Technologies AGTrans MOSFET N-CH 650V 1.7A 3-Pin TO-252 T/R - Product that comes on tape, but is not reeled (Alt: 13AC9045)
    RoHS: Compliant
    Min Qty: 5
    Container: Ammo Pack
    Americas - 0
      IPD60R3K3C6ATMA1
      DISTI # SP001117718
      Infineon Technologies AGTrans MOSFET N-CH 650V 1.7A 3-Pin TO-252 T/R (Alt: SP001117718)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel
      Europe - 0
      • 25000:€0.2339
      • 15000:€0.2519
      • 10000:€0.2799
      • 5000:€0.3139
      • 2500:€0.3699
      IPD60R3K3C6ATMA1
      DISTI # 13AC9045
      Infineon Technologies AGMOSFET, N-CH, 600V, 1.7A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:1.7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):2.97ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes3766
      • 1000:$0.2740
      • 500:$0.2970
      • 250:$0.3190
      • 100:$0.3420
      • 50:$0.4050
      • 25:$0.4680
      • 10:$0.5300
      • 1:$0.6360
      IPD60R3K3C6ATMA1.
      DISTI # 27AC6732
      Infineon Technologies AGLOW POWER_LEGACY ROHS COMPLIANT: YES0
      • 25000:$0.2180
      • 15000:$0.2220
      • 10000:$0.2300
      • 5000:$0.2380
      • 1:$0.2470
      IPD60R3K3C6ATMA1
      DISTI # 726-IPD60R3K3C6ATMA1
      Infineon Technologies AGMOSFET N-Ch 650V 1.7A DPAK-20
      • 1:$0.6300
      • 10:$0.5250
      • 100:$0.3390
      • 1000:$0.2710
      IPD60R3K3C6ATMA1
      DISTI # 2726052
      Infineon Technologies AGMOSFET, N-CH, 600V, 1.7A, TO-252-3
      RoHS: Compliant
      3715
      • 1000:$0.4660
      • 500:$0.5820
      • 100:$0.7850
      • 10:$1.0200
      • 1:$1.1700
      IPD60R3K3C6ATMA1
      DISTI # 2726052
      Infineon Technologies AGMOSFET, N-CH, 600V, 1.7A, TO-252-33720
      • 500:£0.2280
      • 250:£0.2460
      • 100:£0.2650
      • 25:£0.4280
      • 5:£0.4620
      Bild Teil # Beschreibung
      IPD60R3K3C6ATMA1

      Mfr.#: IPD60R3K3C6ATMA1

      OMO.#: OMO-IPD60R3K3C6ATMA1

      MOSFET N-Ch 650V 1.7A DPAK-2
      IPD60R3K3C6

      Mfr.#: IPD60R3K3C6

      OMO.#: OMO-IPD60R3K3C6

      MOSFET N-Ch 650V 1.7A DPAK-2 CoolMOS C6
      IPD60R3K4CEAUMA1

      Mfr.#: IPD60R3K4CEAUMA1

      OMO.#: OMO-IPD60R3K4CEAUMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 650V 2.6A TO252-3
      IPD60R3K3C6

      Mfr.#: IPD60R3K3C6

      OMO.#: OMO-IPD60R3K3C6-INFINEON-TECHNOLOGIES

      MOSFET N-CH 600V 1.7A TO252-3
      IPD60R3K3C6 , 2SD2345-R

      Mfr.#: IPD60R3K3C6 , 2SD2345-R

      OMO.#: OMO-IPD60R3K3C6-2SD2345-R-1190

      Neu und Original
      IPD60R3K3C6BTMA1

      Mfr.#: IPD60R3K3C6BTMA1

      OMO.#: OMO-IPD60R3K3C6BTMA1-1190

      MOSFET N-Ch 650V 1.7A DPAK-2 CoolMOS C6
      IPD60R3K3C6ATMA1

      Mfr.#: IPD60R3K3C6ATMA1

      OMO.#: OMO-IPD60R3K3C6ATMA1-INFINEON-TECHNOLOGIES

      MOSFET N-Ch 650V 1.7A DPAK-2
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5500
      Menge eingeben:
      Der aktuelle Preis von IPD60R3K3C6ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,32 $
      0,32 $
      10
      0,30 $
      3,03 $
      100
      0,29 $
      28,74 $
      500
      0,27 $
      135,70 $
      1000
      0,26 $
      255,50 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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