IPD60R3K3 stock, IPD60R3K3, IPD60R3K3C6ATMA1


PartNumber	IPD60R3K3C6ATMA1	IPD60R3K3C6
Description	MOSFET N-Ch 650V 1.7A DPAK-2	MOSFET N-Ch 650V 1.7A DPAK-2 CoolMOS C6
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	TO-252-3	TO-252-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	600 V	600 V
Id Continuous Drain Current	1.7 A	1.7 A
Rds On Drain Source Resistance	3.3 Ohms	2.97 Ohms
Vgs th Gate Source Threshold Voltage	3 V	2.5 V
Vgs Gate Source Voltage	30 V	20 V
Qg Gate Charge	4.6 nC	4.6 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Pd Power Dissipation	18.1 W	18.1 W
Configuration	Single	Single
Tradename	CoolMOS	CoolMOS
Packaging	Reel	Reel
Height	2.3 mm	2.3 mm
Length	6.5 mm	6.5 mm
Series	CoolMOS C6	CoolMOS C6
Transistor Type	1 N-Channel	1 N-Channel
Width	6.22 mm	6.22 mm
Brand	Infineon Technologies	Infineon Technologies
Fall Time	60 ns	60 ns
Product Type	MOSFET	MOSFET
Rise Time	10 ns	10 ns
Factory Pack Quantity	2500	2500
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	40 ns	40 ns
Typical Turn On Delay Time	8 ns	8 ns
Part # Aliases	IPD60R3K3C6 SP001117718	IPD60R3K3C6BTMA1 SP000799130
Unit Weight	0.139332 oz	0.139332 oz
RoHS	-	Y
Channel Mode	-	Enhancement

Search Part Number : "IPD60R3K3", Match & Start with "IPD60R3K3" - Total : 6

Hersteller	Teil #	Beschreibung
Infineon Technologies	IPD60R3K3C6ATMA1	MOSFET N-Ch 650V 1.7A DPAK-2
	IPD60R3K3C6	MOSFET N-CH 600V 1.7A TO252-3
	IPD60R3K3C6ATMA1	MOSFET N-Ch 650V 1.7A DPAK-2
Infineon Technologies	IPD60R3K3C6	MOSFET N-Ch 650V 1.7A DPAK-2 CoolMOS C6
	IPD60R3K3C6 , 2SD2345-R	Neu und Original
	IPD60R3K3C6BTMA1	MOSFET N-Ch 650V 1.7A DPAK-2 CoolMOS C6

IPD60R3K3