 | |  | |
| PartNumber | IPD60R600CPATMA1 | IPD60R600CPBTMA1 | IPD60R600CP |
| Description | MOSFET N-CH 600V 6.1A TO-252 | MOSFET N-CH 600V 6.1A TO-252 | IGBT Transistors MOSFET N-Ch 600V 6.1A DPAK-2 CoolMOS CP |
| Manufacturer | - | - | infineon |
| Product Category | - | - | FETs - Single |
| Series | - | - | CoolMOS CP |
| Packaging | - | - | Reel |
| Part Aliases | - | - | IPD60R600CPBTMA1 SP000405878 |
| Unit Weight | - | - | 0.139332 oz |
| Mounting Style | - | - | SMD/SMT |
| Tradename | - | - | CoolMOS |
| Package Case | - | - | TO-252-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 60 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 17 ns |
| Rise Time | - | - | 12 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 6.1 A |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Rds On Drain Source Resistance | - | - | 600 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 75 ns |
| Typical Turn On Delay Time | - | - | 17 ns |
| Channel Mode | - | - | Enhancement |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD60R600CPATMA1 | MOSFET N-CH 600V 6.1A TO-252 | |
| IPD60R600CPBTMA1 | MOSFET N-CH 600V 6.1A TO-252 | ||
| IPD60R600CP | IGBT Transistors MOSFET N-Ch 600V 6.1A DPAK-2 CoolMOS CP |