IPD60R600CP

IPD60R600CP
Mfr. #:
IPD60R600CP
Hersteller:
Rochester Electronics, LLC
Beschreibung:
IGBT Transistors MOSFET N-Ch 600V 6.1A DPAK-2 CoolMOS CP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD60R600CP Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
infineon
Produktkategorie
FETs - Einzeln
Serie
CoolMOS CP
Verpackung
Spule
Teil-Aliasnamen
IPD60R600CPBTMA1 SP000405878
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Handelsname
CoolMOS
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
60 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
17 ns
Anstiegszeit
12 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
6.1 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Widerstand
600 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
75 ns
Typische-Einschaltverzögerungszeit
17 ns
Kanal-Modus
Erweiterung
Tags
IPD60R600CP, IPD60R600C, IPD60R60, IPD60R6, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 6.1A 3-Pin(2+Tab) DPAK T/R
*** Source Electronics
CoolMOS Power Transistor
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***nell
MOSFET, N, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.1A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.1A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 650V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
Teil # Mfg. Beschreibung Aktie Preis
IPD60R600CPBTMA1
DISTI # IPD60R600CPBTMA1TR-ND
Infineon Technologies AGMOSFET N-CH 600V 6.1A TO-252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    IPD60R600CPBTMA1
    DISTI # IPD60R600CPBTMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 600V 6.1A TO-252
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IPD60R600CPBTMA1
      DISTI # IPD60R600CPBTMA1DKR-ND
      Infineon Technologies AGMOSFET N-CH 600V 6.1A TO-252
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IPD60R600CPATMA1
        DISTI # IPD60R600CPATMA1-ND
        Infineon Technologies AGMOSFET N-CH 600V 6.1A TO-252
        RoHS: Compliant
        Container: Tape & Reel (TR)
        Limited Supply - Call
          IPD60R600CPATMA1
          DISTI # IPD60R600CPATMA1
          Infineon Technologies AGTrans MOSFET N-CH 600V 6.1A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R600CPATMA1)
          RoHS: Compliant
          Container: Reel
          Americas - 0
            IPD60R600CP
            DISTI # 33P7145
            Infineon Technologies AGMOSFET, N CHANNEL, 650V, 6.1A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:6.1A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.54ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes0
              IPD60R600CP
              DISTI # 726-IPD60R600CP
              Infineon Technologies AGMOSFET N-Ch 600V 6.1A DPAK-2 CoolMOS CP
              RoHS: Compliant
              0
                IPD60R600CPInfineon Technologies AGPower Field-Effect Transistor, 6.1A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
                RoHS: Compliant
                14945
                • 1000:$0.6800
                • 500:$0.7100
                • 100:$0.7400
                • 25:$0.7700
                • 1:$0.8300
                IPD60R600CP
                DISTI # 1664029
                Infineon Technologies AGMOSFET, N, TO-252
                RoHS: Compliant
                70
                • 5:£0.5950
                • 25:£0.5450
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                Mfr.#: IPD60R280P7SAUMA1-CUT TAPE

                OMO.#: OMO-IPD60R280P7SAUMA1-CUT-TAPE-1190

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                Mfr.#: IPD60R360P7SAUMA1-CUT TAPE

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                Verfügbarkeit
                Aktie:
                Available
                Auf Bestellung:
                1500
                Menge eingeben:
                Der aktuelle Preis von IPD60R600CP dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
                Referenzpreis (USD)
                Menge
                Stückpreis
                ext. Preis
                1
                1,02 $
                1,02 $
                10
                0,97 $
                9,69 $
                100
                0,92 $
                91,80 $
                500
                0,87 $
                433,50 $
                1000
                0,82 $
                816,00 $
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