IPP08CN

IPP08CNE8N G vs IPP08CN10N G vs IPP08CN10L G

 
PartNumberIPP08CNE8N GIPP08CN10N GIPP08CN10L G
DescriptionMOSFET N-Ch 85V 95A TO220-3MOSFET N-Ch 100V 95A TO220-3MOSFET N-CH 100V 98A TO220-3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage85 V100 V-
Id Continuous Drain Current95 A95 A-
Rds On Drain Source Resistance6.4 mOhms8.5 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation167 W167 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height15.65 mm15.65 mm-
Length10 mm10 mm-
Transistor Type1 N-Channel1 N-Channel-
Width4.4 mm4.4 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time6 ns6 ns-
Product TypeMOSFETMOSFET-
Rise Time24 ns24 ns-
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time26 ns26 ns-
Typical Turn On Delay Time15 ns15 ns-
Part # AliasesIPP08CNE8NGXKIPP08CN10NGXK-
Unit Weight0.211644 oz0.211644 oz-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPP08CNE8N G MOSFET N-Ch 85V 95A TO220-3
IPP08CN10N G MOSFET N-Ch 100V 95A TO220-3
Infineon Technologies
Infineon Technologies
IPP08CN10L G MOSFET N-CH 100V 98A TO220-3
IPP08CNE8N G MOSFET N-CH 85V 95A TO-220
IPP08CN10N G MOSFET N-CH 100V 95A TO-220
IPP08CN10 Neu und Original
IPP08CN10L Neu und Original
IPP08CN10LG Neu und Original
IPP08CN10N Neu und Original
IPP08CN10N,08CN10N Neu und Original
IPP08CN10NG Neu und Original
IPP08CN10NG,IPP08CN10N,0 Neu und Original
IPP08CN10NG. Neu und Original
IPP08CN15N Neu und Original
IPP08CNE8NG Power Field-Effect Transistor, 95A I(D), 85V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP08CNE8NG,08CNE8N Neu und Original
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