PartNumber | IXFX32N100Q3 | IXFX32N100P | IXFX32N80P |
Description | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/32A | MOSFET 32 Amps 1000V 0.32 Rds | MOSFET 32 Amps 800V 0.27 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | 800 V |
Id Continuous Drain Current | 32 A | 32 A | 32 A |
Rds On Drain Source Resistance | 320 mOhms | 320 mOhms | 270 mOhms |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 195 nC | 225 nC | - |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1.25 kW | 960 W | 830 W |
Configuration | Single | Single | Single |
Tradename | HiPerFET | HiPerFET | HiPerFET |
Packaging | Tube | Tube | Tube |
Series | IXFX32N100 | IXFX32N100 | IXFX32N80 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | IXYS | IXYS | IXYS |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 250 ns | 55 ns | 24 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.056438 oz | 0.056438 oz | 0.056438 oz |
Vgs th Gate Source Threshold Voltage | - | 6.5 V | - |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 21.34 mm | 21.34 mm |
Length | - | 16.13 mm | 16.13 mm |
Type | - | Polar Power MOSFET HiPerFET | - |
Width | - | 5.21 mm | 5.21 mm |
Forward Transconductance Min | - | 13 S | - |
Fall Time | - | 43 ns | 24 ns |
Typical Turn Off Delay Time | - | 76 ns | 85 ns |
Typical Turn On Delay Time | - | 50 ns | 30 ns |