 | |  | |
| PartNumber | SI2305CDS-T1-GE3 | SI2306-TP | SI2305B-TP |
| Description | MOSFET -8V Vds 8V Vgs SOT-23 | MOSFET N-Channel MOSFET, SOT-23 package | MOSFET -20V, -4.2A,PChannel Mosfet |
| Manufacturer | Vishay | Micro Commercial Components (MCC) | Micro Commercial Components (MCC) |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | N-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 8 V | 30 V | 20 V |
| Id Continuous Drain Current | 5.8 A | 3.16 A | 4.2 A |
| Rds On Drain Source Resistance | 35 mOhms | 38 mOhms | 80 mOhms |
| Vgs th Gate Source Threshold Voltage | 400 mV | 1 V | 900 mV |
| Vgs Gate Source Voltage | 4.5 V | 20 V | 8 V |
| Qg Gate Charge | 30 nC | 9 nC | 15 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1.7 W | 750 mW | 1.4 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.45 mm | - | - |
| Length | 2.9 mm | - | - |
| Series | SI2 | N-Ch Polarity | TrenchFET |
| Transistor Type | 1 P-Channel | 1 N-Channel | - |
| Width | 1.6 mm | - | - |
| Brand | Vishay / Siliconix | Micro Commercial Components (MCC) | Micro Commercial Components (MCC) |
| Forward Transconductance Min | 17 S | 7 S | 6 S |
| Fall Time | 10 ns | 6 ns | 10 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 20 ns | 12 ns | 35 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 40 ns | 14 ns | 32 ns |
| Typical Turn On Delay Time | 20 ns | 7 ns | 13 ns |
| Part # Aliases | SI2305CDS-GE3 | - | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2305CDS-T1-GE3 | MOSFET -8V Vds 8V Vgs SOT-23 | |
| SI2306BDS-T1-E3 | MOSFET 30V 4.0A 0.75W | ||
| SI2306BDS-T1-GE3 | MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V | ||
Micro Commercial Components (MCC) |
SI2307-TP | MOSFET P-Channel MOSFET, SOT-23 package | |
| SI2306-TP | MOSFET N-Channel MOSFET, SOT-23 package | ||
| SI2305B-TP | MOSFET -20V, -4.2A,PChannel Mosfet | ||
| SI2305B-TP | P-CHANNEL,MOSFETS,SOT-23 PACKAGE | ||
| SI2306-TP | N-CHANNEL MOSFET, SOT-23 PACKAGE | ||
| SI2307-TP | P-CHANNEL MOSFET, SOT-23 PACKAGE | ||
Vishay |
SI2305DS-T1-E3 | IGBT Transistors MOSFET 8V 3.5A 1.25W | |
| SI2305ADS-T1-E3 | MOSFET P-CH 8V 5.4A SOT23-3 | ||
| SI2305ADS-T1-GE3 | MOSFET P-CH 8V 5.4A SOT23-3 | ||
| SI2305CDS-T1-GE3 | Neu und Original | ||
| SI2306BDS-T1-E3 | MOSFET N-CH 30V 3.16A SOT23-3 | ||
| SI2306BDS-T1-GE3 | MOSFET N-CH 30V 3.16A SOT23-3 | ||
| SI2305BS-T1-E3 | Neu und Original | ||
| SI2305CDS | Neu und Original | ||
| SI2305CDS-T1-GE3/N5 | Neu und Original | ||
| SI2305CDS-TI-GE3 | Neu und Original | ||
| SI2305DS | Neu und Original | ||
| SI2305DS A5 | Neu und Original | ||
| SI2305DS-E3 | Neu und Original | ||
| SI2305DS-T1 | MOSFET RECOMMENDED ALT 781-SI2305CDS-GE3 | ||
| SI2305DS-T1--E3 | Neu und Original | ||
| SI2305DS-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI2305CDS-GE3 | ||
| SI2305DS-T1-T3 | Neu und Original | ||
| SI2305DS-TI | Neu und Original | ||
| SI2305DS-TI-E3 | Neu und Original | ||
| SI2305DV-T1-E3 | Neu und Original | ||
| SI2305DY-T1-E3 | Neu und Original | ||
| SI2306 | Neu und Original | ||
| SI2306 , MAX6363LUT46 | Neu und Original | ||
| SI2306-A6SHB | Neu und Original | ||
| SI2306BDS | Neu und Original | ||
| SI2306BDS-T-E3 | Neu und Original | ||
| SI2306BDS-T1 | Neu und Original | ||
| SI2306BDS-T1-E3 L6Y | Neu und Original | ||
| SI2306BDS-T1-E3 , MA8091 | Neu und Original | ||
| SI2306CDS-T1-GE3 | Neu und Original | ||
| SI2306DS | 3.5 A, 30 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-236 | ||
| SI2306DS-T1 | MOSFET RECOMMENDED ALT 781-SI2306BDS-E3 | ||
| SI2306DS-T1-E3 | MOSFET RECOMMENDED ALT 781-SI2306BDS-E3 | ||
| SI2306DS-T1-GE3 | Neu und Original | ||
| SI2307 | Neu und Original | ||
| SI2307 A7SHB | Neu und Original | ||
| SI2307BDS | 2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | ||
| SI2305CDS-T1-GE3-CUT TAPE | Neu und Original | ||
| SI2306BDS-T1-E3-CUT TAPE | Neu und Original | ||
| SI2305DS-E3-T1 | Neu und Original | ||
| SI2306WCA | Neu und Original |