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| PartNumber | SIA456DJ-T1-GE3 | SIA456DJ-T3-GE3 | SIA456DJ-T1-GE3-CUT TAPE |
| Description | MOSFET 200V Vds 16V Vgs PowerPAK SC-70 | MOSFET 200V Vds 16V Vgs PowerPAK SC-70 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SC-70-6 | SC-70-6 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
| Id Continuous Drain Current | 2.6 A | 2.6 A | - |
| Rds On Drain Source Resistance | 1.38 Ohms | 1.38 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | 0.6 V | - |
| Vgs Gate Source Voltage | 4.5 V | 16 V | - |
| Qg Gate Charge | 5 nC | 14.5 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 19 W | 19 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | - |
| Packaging | Reel | Reel | - |
| Series | SIA | SIA | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 5 S | 5 S | - |
| Fall Time | 20 ns | 20 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 25 ns | 25 ns | - |
| Factory Pack Quantity | 3000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 30 ns | 30 ns | - |
| Typical Turn On Delay Time | 10 ns | 10 ns | - |
| Part # Aliases | SIA456DJ-GE3 | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIA456DJ-T1-GE3 | MOSFET 200V Vds 16V Vgs PowerPAK SC-70 | |
| SIA456DJ-T3-GE3 | MOSFET 200V Vds 16V Vgs PowerPAK SC-70 | ||
| SIA456DJ-T1-GE3-CUT TAPE | Neu und Original | ||
Vishay |
SIA456DJ-T1-GE3 | MOSFET N-CH 200V 2.6A SC70-6 |