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| PartNumber | SIHF530-GE3 | SIHF520STRR-GE3 | SIHF520STRL-GE3 |
| Description | MOSFET 100V Vds 20V Vgs TO-220AB | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | - | - |
| Mounting Style | Through Hole | SMD/SMT | SMD/SMT |
| Package / Case | TO-220AB-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 14 A | 9.2 A | 9.2 A |
| Rds On Drain Source Resistance | 160 mOhms | 270 mOhms | 270 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 26 nC | 16 nC | 16 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 88 W | 60 W | 60 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Height | 15.49 mm | - | - |
| Length | 10.41 mm | - | - |
| Series | SIH | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.7 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 5.1 S | 2.7 S | 2.7 S |
| Fall Time | 24 ns | 20 ns | 20 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 34 ns | 30 ns | 30 ns |
| Factory Pack Quantity | 1 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 23 ns | 19 ns | 19 ns |
| Typical Turn On Delay Time | 10 ns | 8.8 ns | 8.8 ns |
| Packaging | - | Reel | Reel |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHF540S-GE3 | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | |
| SIHF530STRL-GE3 | MOSFET 100V Vds 20V Vgs TO-220AB | ||
| SIHF530-GE3 | MOSFET 100V Vds 20V Vgs TO-220AB | ||
| SIHF5N50D-E3 | MOSFET 500V Vds 30V Vgs TO-220 FULLPAK | ||
| SIHF520STRR-GE3 | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | ||
| SIHF520STRL-GE3 | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | ||
| SIHF540STRL-GE3 | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | ||
Vishay |
SIHF5N50D-E3 | Darlington Transistors MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS | |
| SIHF520 | Neu und Original | ||
| SIHF530 | Neu und Original | ||
| SIHF530STRL-GE3 | - Tape and Reel (Alt: SIHF530STRL-GE3) | ||
| SIHF530STRR-GE3 | SIHF530STRR-GE3 N-channel MOSFET Transistor, 14 A, 100 V, 3-Pin D2PAK | ||
| SIHF540S-GE3 | Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK | ||
| SIHF540SGE3 | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| SIHF540STRL-GE3 | Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK T/R | ||
| SIHF5N50C-E3 | Neu und Original | ||
| SIHF5N50D | Neu und Original |