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IPD65R1K4CFDBTMA1

IPD65R1K4CFDBTMA1
Mfr. #:
IPD65R1K4CFDBTMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 700V 8.2A DPAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD65R1K4CFDBTMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPD65R1K4CFDBTMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
2.8 A
Rds On - Drain-Source-Widerstand:
1.26 Ohms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
10 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
28.4 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Serie:
IPD65R1
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Abfallzeit:
18.2 ns
Produktart:
MOSFET
Anstiegszeit:
6 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
33 ns
Typische Einschaltverzögerungszeit:
8 ns
Teil # Aliase:
IPD65R1K4CFDBTMA1 SP000953126
Gewichtseinheit:
0.139332 oz
Tags
IPD65R1K4CF, IPD65R1K4, IPD65R1K, IPD65R1, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 650(Min)V 2.8A 3-Pin TO-252 T/R
***ronik
N-CH 650V 2,8A 1400mOhm TO252-3
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPD65R1K4CFDBTMA1
DISTI # IPD65R1K4CFDBTMA1CT-ND		Infineon Technologies AGMOSFET N-CH 650V 2.8A TO-252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IPD65R1K4CFDBTMA1
    DISTI # IPD65R1K4CFDBTMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 650V 2.8A TO-252
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IPD65R1K4CFDBTMA1
      DISTI # IPD65R1K4CFDBTMA1TR-ND      		Infineon Technologies AGMOSFET N-CH 650V 2.8A TO-252
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 2500:$0.4546
      IPD65R1K4CFDBTMA1
      DISTI # SP000953126      		Infineon Technologies AGTrans MOSFET N-CH 700V 2.8A 3-Pin TO-252 T/R (Alt: SP000953126)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel      		Europe - 0
      • 2500:€0.6509
      • 5000:€0.5599
      • 10000:€0.4769
      • 15000:€0.4089
      • 25000:€0.3879
      IPD65R1K4CFDBTMA1Infineon Technologies AGPower Bipolar Transistor
      RoHS: Compliant      		2090
      • 1000:$0.4100
      • 500:$0.4300
      • 100:$0.4500
      • 25:$0.4700
      • 1:$0.5000
      IPD65R1K4CFD
      DISTI # 726-IPD65R1K4CFD      		Infineon Technologies AGMOSFET N-Ch 700V 8.2A DPAK-2
      RoHS: Compliant      		39
      • 1:$0.9700
      • 10:$0.8270
      • 100:$0.6350
      • 500:$0.5610
      • 1000:$0.4430
      IPD65R1K4CFDBTMA1
      DISTI # 726-IPD65R1K4CFDBTMA      		Infineon Technologies AGMOSFET N-Ch 700V 8.2A DPAK-2
      RoHS: Compliant      		232
      • 1:$0.9700
      • 10:$0.8270
      • 100:$0.6350
      • 500:$0.5610
      • 1000:$0.4430
      • 2500:$0.3930
      • 10000:$0.3780
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      Verfügbarkeit
      Aktie:
      182
      Auf Bestellung:
      2165
      Menge eingeben:
      Der aktuelle Preis von IPD65R1K4CFDBTMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,96 $
      0,96 $
      10
      0,83 $
      8,26 $
      100
      0,63 $
      63,40 $
      500
      0,56 $
      280,00 $
      1000
      0,44 $
      442,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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