IPD65R1K4

IPD65R1K4CFD vs IPD65R1K4C6ATMA1 vs IPD65R1K4CFDATMA1

 
PartNumberIPD65R1K4CFDIPD65R1K4C6ATMA1IPD65R1K4CFDATMA1
DescriptionMOSFET N-Ch 700V 8.2A DPAK-2MOSFET N-Ch 700V 3.2A DPAK-2MOSFET N-CH 650V 2.8A TO-252
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V650 V-
Id Continuous Drain Current2.8 A3.2 A-
Rds On Drain Source Resistance1.26 Ohms1.26 Ohms-
Vgs th Gate Source Threshold Voltage3.5 V2.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge10 nC10.5 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation28.4 W28 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
SeriesXPD65R1CoolMOS C6-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time18.2 ns18.2 ns-
Product TypeMOSFETMOSFET-
Rise Time6 ns5.9 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time33 ns33 ns-
Typical Turn On Delay Time8 ns7.7 ns-
Part # AliasesIPD65R1K4CFDBTMA1 SP000953126IPD65R1K4C6ATMA1 SP001107078-
Unit Weight0.139332 oz0.139332 oz-
Tradename-CoolMOS-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPD65R1K4CFD MOSFET N-Ch 700V 8.2A DPAK-2
IPD65R1K4CFDBTMA1 MOSFET N-Ch 700V 8.2A DPAK-2
IPD65R1K4CFDATMA2 MOSFET
IPD65R1K4CFDATMA1 MOSFET N-CH 650V 2.8A TO-252
IPD65R1K4CFDATMA2 LOW POWER_LEGACY
IPD65R1K4C6ATMA1 MOSFET N-Ch 700V 3.2A DPAK-2
IPD65R1K4CFDBTMA1 RF Bipolar Transistors MOSFET N-Ch 700V 8.2A DPAK-2
Infineon Technologies
Infineon Technologies
IPD65R1K4C6ATMA1 MOSFET N-Ch 700V 3.2A DPAK-2
IPD65R1K4C6 MOSFET N-Ch 700V 3.2A DPAK-2
IPD65R1K4CFD MOSFET N-Ch 700V 8.2A DPAK-2
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