PartNumber | IPD65R1K4CFD | IPD65R1K4C6ATMA1 | IPD65R1K4CFDATMA1 |
Description | MOSFET N-Ch 700V 8.2A DPAK-2 | MOSFET N-Ch 700V 3.2A DPAK-2 | MOSFET N-CH 650V 2.8A TO-252 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
Id Continuous Drain Current | 2.8 A | 3.2 A | - |
Rds On Drain Source Resistance | 1.26 Ohms | 1.26 Ohms | - |
Vgs th Gate Source Threshold Voltage | 3.5 V | 2.5 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 10 nC | 10.5 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 28.4 W | 28 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Series | XPD65R1 | CoolMOS C6 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 18.2 ns | 18.2 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 6 ns | 5.9 ns | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 33 ns | 33 ns | - |
Typical Turn On Delay Time | 8 ns | 7.7 ns | - |
Part # Aliases | IPD65R1K4CFDBTMA1 SP000953126 | IPD65R1K4C6ATMA1 SP001107078 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Tradename | - | CoolMOS | - |