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| PartNumber | IPD65R1K4CFD | IPD65R1K0CEAUMA1 | IPD65R1K4C6ATMA1 |
| Description | MOSFET N-Ch 700V 8.2A DPAK-2 | MOSFET CONSUMER | MOSFET N-Ch 700V 3.2A DPAK-2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | 650 V |
| Id Continuous Drain Current | 2.8 A | - | 3.2 A |
| Rds On Drain Source Resistance | 1.26 Ohms | - | 1.26 Ohms |
| Vgs th Gate Source Threshold Voltage | 3.5 V | - | 2.5 V |
| Vgs Gate Source Voltage | 20 V | - | 20 V |
| Qg Gate Charge | 10 nC | - | 10.5 nC |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 28.4 W | - | 28 W |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm | 6.5 mm |
| Series | XPD65R1 | CoolMOS CE | CoolMOS C6 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 18.2 ns | - | 18.2 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 6 ns | - | 5.9 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 33 ns | - | 33 ns |
| Typical Turn On Delay Time | 8 ns | - | 7.7 ns |
| Part # Aliases | IPD65R1K4CFDBTMA1 SP000953126 | IPD65R1K0CE SP001421368 | IPD65R1K4C6ATMA1 SP001107078 |
| Unit Weight | 0.139332 oz | 0.011993 oz | 0.139332 oz |
| Tradename | - | CoolMOS | CoolMOS |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD65R1K4CFD | MOSFET N-Ch 700V 8.2A DPAK-2 | |
| IPD65R1K4CFDBTMA1 | MOSFET N-Ch 700V 8.2A DPAK-2 | ||
| IPD65R1K0CEAUMA1 | MOSFET CONSUMER | ||
| IPD65R1K4CFDATMA2 | MOSFET | ||
| IPD65R1K4CFDATMA1 | MOSFET N-CH 650V 2.8A TO-252 | ||
| IPD65R1K5CEAUMA1 | MOSFET N-CH 700V 5.2A TO252-3 | ||
| IPD65R1K4CFDATMA2 | LOW POWER_LEGACY | ||
| IPD65R1K0CEAUMA1 | MOSFET N-CH 650V TO-252 | ||
| IPD65R1K4C6ATMA1 | MOSFET N-Ch 700V 3.2A DPAK-2 | ||
| IPD65R1K4CFDBTMA1 | RF Bipolar Transistors MOSFET N-Ch 700V 8.2A DPAK-2 | ||
Infineon Technologies |
IPD65R1K4C6ATMA1 | MOSFET N-Ch 700V 3.2A DPAK-2 | |
| IPD65R1K4C6 | MOSFET N-Ch 700V 3.2A DPAK-2 | ||
| IPD65R1K4CFD | MOSFET N-Ch 700V 8.2A DPAK-2 |