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IPD65R1K0CEAUMA1

IPD65R1K0CEAUMA1
Mfr. #:
IPD65R1K0CEAUMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET CONSUMER
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD65R1K0CEAUMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPD65R1K0CEAUMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Vds - Drain-Source-Durchbruchspannung:
650 V
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Serie:
CoolMOS CE
Breite:
6.22 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
IPD65R1K0CE SP001421368
Gewichtseinheit:
0.011993 oz
Tags
IPD65R1K, IPD65R1, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 7.2A 3-Pin(2+Tab) DPAK T/R
***ark
Mosfet, N-Ch, 650V, 7.2A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:7.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.86Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***et
Transistor MOSFET N-CH 750V 7.4A 3-Pin TO-252 T/R
***ark
Mosfet, N-Ch, 700V, 7.4A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:7.4A; Drain Source Voltage Vds:700V; On Resistance Rds(On):0.86Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS CE is a technology platform of Infineons market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. With the extended family, Infineon offers 600V, 650V and 700V devices targeting low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications. | Summary of Features: Thermal behavior; 90C on device, open case; 50C/70C close case temperature; EMI within EN55022B standard; Ease of use and fast design-in | Benefits: Low conduction losses from large margin between R DS(on) typical to nominal; Low switching losses from optimized output capacitance (E oss); Optimized EMI to balance switching speed and EMI behavior; Good controllability given the integrated R g | Target Applications: Low power chargers; Adapters; PC silverbox; LCD TV; LED retrofit; LED drivers
***icroelectronics
N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in DPAK package
***ical
Trans MOSFET N-CH 650V 5.5A 3-Pin(2+Tab) DPAK T/R
***el Electronic
IC REG LIN 1.5V 3A DDPAK/TO263-5
*** Electronics
Transistor: N-MOSFET; unipolar; 650V; 4.5A; 37W; PG-TO252-3
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
*** Electronic Components
MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS
***ical
Trans MOSFET N-CH 650V 3.9A Automotive 3-Pin(2+Tab) DPAK T/R
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 2 A, 3.4 Ω, DPAK
***r Electronics
Power Field-Effect Transistor, 2A I(D), 800V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, QFET®, 600 V, 1.9 A, 4.7 Ω, DPAK
***r Electronics
Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
Teil # Mfg. Beschreibung Aktie Preis
IPD65R1K0CEAUMA1
DISTI # 32383709		Infineon Technologies AGTrans MOSFET N-CH 650V 7.2A 3-Pin(2+Tab) DPAK T/R2500
  • 2500:$0.2442
IPD65R1K0CEAUMA1
DISTI # IPD65R1K0CEAUMA1-ND		Infineon Technologies AGMOSFET N-CH 650V TO-252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.2969
IPD65R1K0CEAUMA1
DISTI # IPD65R1K0CEAUMA1		Infineon Technologies AGTrans MOSFET N-CH 700V 7.2A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R1K0CEAUMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.2469
  • 15000:$0.2519
  • 10000:$0.2609
  • 5000:$0.2699
  • 2500:$0.2799
IPD65R1K0CEAUMA1
DISTI # SP001421368		Infineon Technologies AGTrans MOSFET N-CH 700V 7.2A 3-Pin TO-252 T/R (Alt: SP001421368)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.2319
  • 15000:€0.2489
  • 10000:€0.2699
  • 5000:€0.2949
  • 2500:€0.3599
IPD65R1K0CEAUMA1
DISTI # 34AC1685		Infineon Technologies AGMOSFET, N-CH, 650V, 7.2A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:7.2A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.86ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes277
  • 1000:$0.3150
  • 500:$0.3410
  • 250:$0.3680
  • 100:$0.3940
  • 50:$0.4660
  • 25:$0.5390
  • 10:$0.6110
  • 1:$0.7270
IPD65R1K0CEAUMA1
DISTI # 726-IPD65R1K0CEAUMA1		Infineon Technologies AGMOSFET CONSUMER
RoHS: Compliant		0
  • 1:$0.7200
  • 10:$0.6050
  • 100:$0.3900
  • 1000:$0.3120
IPD65R1K0CEAUMA1
DISTI # 2781174		Infineon Technologies AGMOSFET, N-CH, 650V, 7.2A, TO-252
RoHS: Compliant		277
  • 100:$0.6010
  • 25:$0.7370
  • 5:$0.8460
IPD65R1K0CEAUMA1
DISTI # 2781174		Infineon Technologies AGMOSFET, N-CH, 650V, 7.2A, TO-252247
  • 100:£0.3730
  • 10:£0.6360
  • 1:£0.7880
Bild Teil # Beschreibung
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 MOSFET N-Ch 700V 8.2A DPAK-2
IPD65R1K4CFDBTMA1

Mfr.#: IPD65R1K4CFDBTMA1

OMO.#: OMO-IPD65R1K4CFDBTMA1

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IPD65R1K0CEAUMA1

Mfr.#: IPD65R1K0CEAUMA1

OMO.#: OMO-IPD65R1K0CEAUMA1

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IPD65R1K4CFDATMA2

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OMO.#: OMO-IPD65R1K4CFDATMA2

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IPD65R1K4CFDATMA1

Mfr.#: IPD65R1K4CFDATMA1

OMO.#: OMO-IPD65R1K4CFDATMA1-INFINEON-TECHNOLOGIES

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Mfr.#: IPD65R1K5CEAUMA1

OMO.#: OMO-IPD65R1K5CEAUMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 700V 5.2A TO252-3
IPD65R1K0CEAUMA1

Mfr.#: IPD65R1K0CEAUMA1

OMO.#: OMO-IPD65R1K0CEAUMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 650V TO-252
IPD65R1K4CFD

Mfr.#: IPD65R1K4CFD

OMO.#: OMO-IPD65R1K4CFD-1190

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IPD65R1K4C6ATMA1

Mfr.#: IPD65R1K4C6ATMA1

OMO.#: OMO-IPD65R1K4C6ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-Ch 700V 3.2A DPAK-2
IPD65R1K4CFDBTMA1

Mfr.#: IPD65R1K4CFDBTMA1

OMO.#: OMO-IPD65R1K4CFDBTMA1-INFINEON-TECHNOLOGIES

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von IPD65R1K0CEAUMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,72 $
0,72 $
10
0,60 $
6,05 $
100
0,39 $
39,00 $
1000
0,31 $
312,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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