 | |  | |
| PartNumber | BSC079N10NSGATMA1 | BSC079N03LSCGATMA1 | BSC079N03SG |
| Description | MOSFET MV POWER MOS | MOSFET LV POWER MOS | MOSFET N-CH 30V 40A TDSON-8 |
| Manufacturer | Infineon | Infineon | INFINEON |
| Product Category | MOSFET | MOSFET | IC Chips |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | TDSON-8 | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | BSC079N10NS BSC79N1NSGXT G SP000379590 | BSC079N03LSC BSC79N3LSCGXT G SP000527424 | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC080N03LSGATMA1 | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3 | |
| BSC080N03MS G | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M | ||
| BSC084P03NS3 G | MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 | ||
| BSC084P03NS3E G | MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 | ||
| BSC080P03LS G | MOSFET P-Ch -30V 16A TDSON-8 OptiMOS P | ||
| BSC082N10LS G | MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2 | ||
| BSC079N03LSCGATMA1 | MOSFET N-CH 30V 14A 8TDSON | ||
| BSC079N03SG | MOSFET N-CH 30V 40A TDSON-8 | ||
| BSC079N10NSGATMA1 | MOSFET N-CH 100V 100A TDSON-8 | ||
| BSC080N03LSGATMA1 | MOSFET N-CH 30V 53A TDSON-8 | ||
| BSC080N03MS G | Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R (Alt: BSC080N03MS G) | ||
| BSC080N03MSGATMA1 | MOSFET N-CH 30V 53A TDSON-8 | ||
| BSC080P03LS G | MOSFET P-Ch -30V 16A TDSON-8 OptiMOS P | ||
| BSC080P03LSGAUMA1 | MOSFET P-CH 30V 30A TDSON-8 | ||
| BSC084P03NS3 G | Trans MOSFET P-CH 30V 14.5A 8-Pin TDSON (Alt: BSC084P03NS3 G) | ||
| BSC082N10LSGATMA1 | MOSFET N-CH 100V 100A TDSON-8 | ||
| BSC082N10LS G | MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2 | ||
| BSC084P03NS3E G | RF Bipolar Transistors MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 | ||
Infineon Technologies |
BSC079N10NSGATMA1 | MOSFET MV POWER MOS | |
| BSC079N03LSCGATMA1 | MOSFET LV POWER MOS | ||
| BSC080N03MSGATMA1 | MOSFET LV POWER MOS | ||
| BSC079N10NSGXT | Trans MOSFET N-CH 100V 13.4A 8-Pin TDSON EP - Tape and Reel (Alt: BSC079N10NSGATMA1) | ||
| BSC084P03NS3EGATMA | Transistor: P-MOSFET, unipolar, -30V, -78.6A, 69W, PG-TDSON-8 | ||
| BSC079N03LSCGXT | Trans MOSFET N-CH 30V 14A 8-Pin TDSON EP - Tape and Reel (Alt: BSC079N03LSCGATMA1) | ||
| BSC079N03SGATMA1 | Neu und Original | ||
| BSC079N10NSGS | Neu und Original | ||
| BSC080N03NMS | Neu und Original | ||
| BSC080P03LSG | Trans MOSFET P-CH 30V 16A 8-Pin TDSON T/R (Alt: BSC080P03LS G) | ||
| BSC080P03LSGAUMA1 , TDK5 | Neu und Original | ||
| BSC0811ND | Neu und Original | ||
| BSC082N03L | Neu und Original | ||
| BSC082N10LS | Neu und Original | ||
| BSC082N10LSGATMA1 , TDK5 | Neu und Original | ||
| BSC084P03NS3EG | Neu und Original | ||
| BSC080N03LSGATMA1-CUT TAPE | Neu und Original | ||
| BSC079N03LSG | Neu und Original | ||
| BSC079N03S | Neu und Original | ||
| BSC079N03S G | Neu und Original | ||
| BSC079N10NS | Neu und Original | ||
| BSC079N10NS3G | Neu und Original | ||
| BSC079N10NSG | 100V,100A,N Channel Power MOSFET | ||
| BSC080N03LS | Neu und Original | ||
| BSC080N03LS G | Trans MOSFET N-CH 30V 14A 8-Pin TDSON T/R (Alt: BSC080N03LS G) | ||
| BSC080N03LSG | 14 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| BSC080P03LS | Power Field-Effect Transistor, 16A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC082N10LSG | Trans MOSFET N-CH 100V 13.8A 8-Pin TDSON T/R (Alt: BSC082N10LS G) | ||
| BSC079N03LSCG | MOSFET, N-CH, 30V, 50A, TDSON | ||
| BSC079N03S G | IGBT Transistors MOSFET N-Ch 30V 14.6A TDSON-8 | ||
| BSC079N10NS G | MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2 | ||
| BSC080N03MSG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |