RFD

RFD14N05SM vs RFD14N05SM96 vs RFD14N05SM96156

 
PartNumberRFD14N05SMRFD14N05SM96RFD14N05SM96156
DescriptionMOSFET TO-252AA N-Ch Power
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage50 V--
Id Continuous Drain Current14 A--
Rds On Drain Source Resistance100 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation48 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height2.39 mm--
Length6.73 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Fall Time17 ns--
Product TypeMOSFET--
Rise Time26 ns--
Factory Pack Quantity75--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesRFD14N05SM_NL--
Unit Weight0.139332 oz--
  • Beginnen mit
  • RFD 366
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
RFD14N05SM9A MOSFET TO-252
RFD15P05SM MOSFET TO-252AA P-Ch Power
RFD14N05SM MOSFET TO-252AA N-Ch Power
RFD14N05SM9A-CUT TAPE Neu und Original
RFD14N05SM96 Neu und Original
RFD14N05SM96156 Neu und Original
RFD14N05SM9A-NL Neu und Original
RFD14N05_NL Neu und Original
RFD14N06L Neu und Original
RFD14N06LSM Neu und Original
RFD14N06SM Neu und Original
RFD14P05 Neu und Original
RFD15N05 Neu und Original
RFD15N05LESM Neu und Original
RFD15N06LESM9A Neu und Original
RFD15P05IY Power Field-Effect Transistor, 15A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
RFD15P05S5000 Neu und Original
RFD15P05SM96 Neu und Original
RFD15P05SM9A MOSFET TO-252
RFD15P06 Neu und Original
RFD15P06SM 9A Neu und Original
RFD15P06SM9A Neu und Original
RFD16N Neu und Original
RFD16N02LSM Neu und Original
RFD16N02LSM9A Neu und Original
RFD16N03 Power Field-Effect Transistor, 16A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RFD16N03L MOSFET TO-251
RFD16N03L5M Neu und Original
RFD16N05+ MOSFET N-CH 50V 16A I-PAK
RFD16N05+LSM MOSFET N-CH 50V 16A TO-252AA
RFD16N05+SM MOSFET N-CH 50V 16A TO-252AA
RFD16N052 Neu und Original
RFD14NO5L Neu und Original
RFD14N05L_NL - Bulk (Alt: RFD14N05L_NL)
RFD14N05SM_NL Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
RFD14N06 Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RFD15N06LESM Power Field-Effect Transistor, 15A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
RFD15P06SM Power Field-Effect Transistor, 15A I(D), 60V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
RFD16N02L Power Field-Effect Transistor, 16A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RFD16N03LSM Power Field-Effect Transistor, 16A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
RFD16N03LSM9A Power Field-Effect Transistor, 16A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
ON Semiconductor
ON Semiconductor
RFD14N05SM MOSFET N-CH 50V 14A TO-252AA
RFD14N05SM9A MOSFET N-CH 50V 14A DPAK
RFD15P05 MOSFET P-CH 50V 15A I-PAK
RFD15P05SM MOSFET P-CH 50V 15A TO-252AA
RFD16N05 MOSFET N-CH 50V 16A I-PAK
RFD14N05SM9 Neu und Original
RFD15N06LE Electronic Component
RFD15P05LSM Neu und Original
RFD15P06SM9AS2463 Neu und Original
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