SIH

SIHG039N60EF-GE3 vs SIHG039N60E-GE3 vs SIHG050N60E-GE3

 
PartNumberSIHG039N60EF-GE3SIHG039N60E-GE3SIHG050N60E-GE3
DescriptionMOSFET EF Series Power MOSFET With Fast Body Diode; 4th Gen E Series TechnologyMOSFET 650V Vds; 30V Vgs TO-247ACMOSFET 650V Vds 30V Vgs TO-247AC
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247AC-3TO-247AC-3TO-247AC-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V600 V
Id Continuous Drain Current61 A63 A51 A
Rds On Drain Source Resistance40 mOhms39 mOhms50 mOhms
Vgs th Gate Source Threshold Voltage3 V3 V3 V
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge84 nC126 nC130 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation357 W357 W278 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeTube-
SeriesEFEE
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min18 S17 S12 S
Fall Time78 ns94 ns48 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time172 ns126 ns82 ns
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time152 ns176 ns67 ns
Typical Turn On Delay Time109 ns79 ns35 ns
  • Beginnen mit
  • SIH 797
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHG039N60EF-GE3 MOSFET EF Series Power MOSFET With Fast Body Diode; 4th Gen E Series Technology
SIHG065N60E-GE3 MOSFET 650V Vds; 30V Vgs TO-247AC
SIHG039N60E-GE3 MOSFET 650V Vds; 30V Vgs TO-247AC
SIHG180N60E-GE3 MOSFET 650V Vds; 30V Vgs TO-247AC
SIHG120N60E-GE3 MOSFET 650V Vds; 30V Vgs TO-247AC
SIHG050N60E-GE3 MOSFET 650V Vds 30V Vgs TO-247AC
SIHG11N80E-GE3 MOSFET 800V Vds 30V Vgs TO-247AC
SIHG17N80E-GE3 MOSFET 800V Vds 30V Vgs TO-247AC
SIHG20N50C-E3 MOSFET 500V Vds 30V Vgs TO-247AC
SIHG20N50E-GE3 MOSFET 500V Vds 30V Vgs TO-247AC
SIHG14N50D-GE3 MOSFET 500V Vds 30V Vgs TO-247AC
SIHG22N50D-E3 MOSFET 500V Vds 30V Vgs TO-247AC
SIHG16N50C-E3 MOSFET 500V Vds 30V Vgs TO-247AC
SIHG14N50D-E3 MOSFET 500V Vds 30V Vgs TO-247AC
SIHG17N60D-GE3 MOSFET 600V Vds 30V Vgs TO-247AC
SIHG21N60EF-GE3 MOSFET 600V Vds 30V Vgs TO-247AC
SIHG100N60E-GE3 MOSFET 650V Vds; 30V Vgs TO-247AC
SIHG21N80AE-GE3 MOSFET E Series Power MOSFET
SIHG21N65EF-GE3 MOSFET 650V Vds 30V Vgs TO-247AC
SIHG17N60D-E3 MOSFET 600V Vds 30V Vgs TO-247AC
Vishay
Vishay
SIHG16N50C-E3 Darlington Transistors MOSFET N-Channel 500V
SIHG20N50E-GE3 IGBT Transistors MOSFET N-Channel 500V
SIHG14N50D-GE3 RF Bipolar Transistors MOSFET MOSFET N-CHANNEL 500V
SIHG14N50D-E3 RF Bipolar Transistors MOSFET 500V 400mOhm@10V 14A N-Ch D-SRS
SIHG21N65EF-GE3 MOSFET N-CH 650V 21A TO-247AC
SIHG17N60D-E3 MOSFET N-CH 600V 17A TO247AC
SIHG17N60D-GE3 MOSFET N-CH 600V 17A TO247AC
SIHG20N50C-E3 MOSFET N-CH 500V 20A TO247
SIHG21N60EF-GE3 MOSFET N-CH 600V 21A TO-247AC
SIHG039N60E-GE3 E Series Power MOSFET TO247AC, 39 m @ 10V
SIHG050N60E-GE3 E Series Power MOSFET TO247AC, 50 m @ 10V
SIHG065N60E-GE3 E Series Power MOSFET TO247AC, 65 m @ 10V
SIHG100N60E-GE3 E Series Power MOSFET TO247AC, 100 m @ 10V
SIHG11N80E-GE3 MOSFET N-CH 800V 12A TO247AC
SIHG120N60E-GE3 E Series Power MOSFET TO247AC, 120 m @ 10V
SIHG15N60E-GE3 E Series Power MOSFET
SIHG17N80E-GE3 MOSFET N-CH 800V 15A TO247AC
SIHG180N60E-GE3 E Series Power MOSFET TO247AC, 180 m @ 10V
SIHG0603-R10N Neu und Original
SIHG14N50D Neu und Original
SIHG20N20C-E3 Neu und Original
SIHG20N50 Neu und Original
SIHG20N50-C Neu und Original
SIHG20N50C Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
SIHG20N50C G20N50C Neu und Original
SIHG20N50C-3 Neu und Original
SIHG20N50C-E3,SIHG20N50C Neu und Original
SIHG20N50C3-E3 Neu und Original
SIHG20N50G Neu und Original
SIHG22N50D Neu und Original
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