 | | | |
| PartNumber | SIHB33N60E-GE3 | SIHB33N60E-E3 | SIHB30N60E-E3 |
| Description | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 33 A | 33 A | 29 A |
| Rds On Drain Source Resistance | 99 mOhms | 99 mOhms | 125 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | 2.8 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 100 nC | 100 nC | 85 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 278 W | 278 W | 250 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Bulk | Tube |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | E | E | E |
| Width | 9.65 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 54 ns | 54 ns | 36 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 60 ns | 60 ns | 32 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 99 ns | 99 ns | 63 ns |
| Typical Turn On Delay Time | 28 ns | 28 ns | 19 ns |
| Unit Weight | 0.050717 oz | 0.050717 oz | 0.050717 oz |
| Part # Aliases | - | SIHB33N60E | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHD240N60E-GE3 | MOSFET 600V Vds; +/-30V Vgs DPAK (TO-252) | |
| SIHD1K4N60E-GE3 | MOSFET 600V Vds 30V Vgs DPAK (TO-252) | ||
| SIHB35N60EF-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHD14N60E-GE3 | MOSFET 600V Vds 30V Vgs DPAK (TO-252) | ||
| SIHD2N80E-GE3 | MOSFET 800V Vds 30V Vgs DPAK (TO-252) | ||
| SIHB4N80E-GE3 | MOSFET 800V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHD12N50E-GE3 | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | ||
| SIHB33N60EF-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB33N60ET1-GE3 | MOSFET N-Channel 600V | ||
| SIHB33N60E-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHD180N60E-GE3 | MOSFET 650V Vds; 30V Vgs DPAK (TO-252) | ||
| SIHD186N60EF-GE3 | MOSFET EF Series Power MOSFET With Fast Body Diode; 4th Gen E Series Technology | ||
| SIHD2N80AE-GE3 | MOSFET Nch 800V Vds 30V Vgs TO-252 (DPAK) | ||
| SIHB8N50D-GE3 | MOSFET 500V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB33N60E-E3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB33N60ET5-GE3 | MOSFET 600V Vds E Series D2PAK TO-263 | ||
| SIHB30N60E-E3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
Vishay |
SIHB6N65E-GE3 | IGBT Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS | |
| SIHB8N50D-GE3 | IGBT Transistors MOSFET 500V 850mOhms@10V 8.7A N-Ch D-SRS | ||
| SIHB33N60EF-GE3 | IGBT Transistors MOSFET N-Channel 600V | ||
| SIHB30N60E-E3 | RF Bipolar Transistors MOSFET N-Channel 600V | ||
| SIHB33N60ET1-GE3 | RF Bipolar Transistors MOSFET N-Channel 600V | ||
| SIHD12N50E-GE3 | RF Bipolar Transistors MOSFET N-Channel 500V | ||
| SIHB30N60AEL-GE3 | MOSFET N-CHAN 600V D2PAK | ||
| SIHD240N60E-GE3 | MOSFET N-CHAN 600V DPAK TO-252 | ||
| SIHB30N60E-GE3 | MOSFET N-CH 600V 29A D2PAK | ||
| SIHB33N60E-GE3 | MOSFET N-CH 600V 33A TO-263 | ||
| SIHD14N60E-GE3 | MOSFET N-CHANNEL 600V 13A DPAK | ||
| SIHD2N80E-GE3 | MOSFET N-CH 800V 2.8A DPAK | ||
| SIHB33N60ET5-GE3 | MOSFET N-CH 600V 33A TO263 | ||
| SIHB35N60E-GE3 | MOSFET N-CH 600V 32A D2PAK TO263 | ||
| SIHB35N60EF-GE3 | EF Series Power MOSFET with Fast Body Diode D2PAK (TO-263), 97 m @ 10V | ||
| SIHD180N60E-GE3 | E Series Power MOSFET DPAK (TO-252), 195 m @ 10V | ||
| SIHD1K4N60E-GE3 | E Series Power MOSFET DPAK (TO-252), 1450 m @ 10V | ||
| SIHB33N60E-E3 | RF Bipolar Transistors MOSFET N-Channel 600V | ||
| SIHB30N60E-GE3-CUT TAPE | Neu und Original | ||
| SIHB33N60EF-GE3-CUT TAPE | Neu und Original | ||
| SIHB30N60E | Neu und Original | ||
| SIHB30N60EGE3 | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| SIHB33N60E | N-CH 600V 99mOhm 33A TO263 | ||
| SIHB6N65ET1-GE3 | Neu und Original | ||
| SIHB8N50D | Neu und Original | ||
| SIHC060606-R23M-R23 | Neu und Original | ||
| SIHC060675-R20M-R23 | Neu und Original | ||
| SIHC100808-R12K-R18 | Neu und Original | ||
| SIHC100875-R15K-R29 | Neu und Original | ||
| SIHC100875-R22K-R29 | Neu und Original | ||
| SIHD12N50E | Neu und Original | ||
| SIHD12N50EGE3 | Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
| SIHD3N50D | Neu und Original |