 | |  | |
| PartNumber | SIA533EDJ-T1-GE3 | SIA537EDJ-T1-GE3 | SIA527DJ-T1-GE3 |
| Description | MOSFET -12V Vds 8V Vgs PowerPAK SC-70 | MOSFET -20V Vds 8V Vgs PowerPAK SC-70 | MOSFET -12V Vds 8V Vgs SC-70 N&P PAIR |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SC70-6 | PowerPAK-SC70-6 | PowerPAK-SC70-6 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel | N-Channel, P-Channel |
| Vds Drain Source Breakdown Voltage | 12 V | 12 V, 20 V | 12 V |
| Id Continuous Drain Current | 4.5 A | 4.5 A | 4.5 A |
| Rds On Drain Source Resistance | 34 mOhms, 59 mOhms | 23 mOhms, 44 mOhms | 29 mOhms, 41 mOhms |
| Vgs th Gate Source Threshold Voltage | 400 mV | 400 mV | 400 mV |
| Vgs Gate Source Voltage | 8 V | 8 V | 8 V |
| Qg Gate Charge | 10 nC, 13 nC | 16 nC, 25 nC | 15 nC, 26 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 7.8 W | 7.8 W | 7.8 W |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET, PowerPAK | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 0.75 mm | - | 0.75 mm |
| Length | 2.05 mm | - | 2.05 mm |
| Series | SIA | SIA | SIA |
| Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel |
| Width | 2.05 mm | - | 2.05 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 21 S, 11 S | 23 S, 11 S | 21 S, 12 S |
| Fall Time | 10 ns, 10 ns | 12 ns, 10 ns | 10 ns, 15 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns, 15 ns | 12 ns, 15 ns | 10 ns, 22 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 20 ns, 25 ns | 25 ns, 30 ns | 22 ns, 32 ns |
| Typical Turn On Delay Time | 10 ns, 15 ns | 10 ns, 15 ns | 10 ns, 22 ns |
| Part # Aliases | SIA533EDJ-GE3 | - | - |
| Unit Weight | 0.000988 oz | 0.000988 oz | 0.000988 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIA817EDJ-T1-GE3 | MOSFET -30V Vds 12V Vgs PowerPAK SC-70 | |
| SIA533EDJ-T1-GE3 | MOSFET -12V Vds 8V Vgs PowerPAK SC-70 | ||
| SIA537EDJ-T1-GE3 | MOSFET -20V Vds 8V Vgs PowerPAK SC-70 | ||
| SIA527DJ-T1-GE3 | MOSFET -12V Vds 8V Vgs SC-70 N&P PAIR | ||
| SIA910EDJ-T1-GE3 | MOSFET 12V Vds 8V Vgs PowerPAK SC-70 | ||
| SIA907EDJT-T1-GE3 | MOSFET -20V Vds 12V Vgs Thin PowerPAK SC-70 | ||
| SIA906EDJ-T1-GE3 | MOSFET 20V Vds 12V Vgs PowerPAK SC-70 | ||
| SIA811ADJ-T1-GE3 | MOSFET -20V Vds 8V Vgs PowerPAK SC-70 | ||
| SIA813DJ-T1-GE3 | MOSFET 20V 4.5A 6.5W 94mohm @ 4.5V | ||
| SIA810DJ-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIA400EDJ-T1-GE3 | ||
| SIA810DJ-T1-E3 | MOSFET RECOMMENDED ALT 78-SIA400EDJ-T1-GE3 | ||
| SIA850DJ-T1-GE3 | MOSFET 190V 0.95A 7.0W | ||
| SIA811DJ-T1-GE3 | MOSFET RECOMMENDED ALT 781-SIA811ADJ-GE3 | ||
| SIA778DJ-T1-GE3 | MOSFET RECOMMENDED ALT 781-SIA910EDJ-T1-GE3 | ||
| SIA811DJ-T1-E3 | MOSFET 20V 4.5A 6.5W 94mohm @ 4.5V | ||
Vishay |
SIA778DJ-T1-GE3 | IGBT Transistors MOSFET N-CHANNEL 12-V & 20-V (D-S) MOSFET | |
| SIA906EDJ-T1-GE3 | IGBT Transistors MOSFET 20V 4.5A 7.8W 46mohm @ 4.5V | ||
| SIA814DJ-T1-GE3 | IGBT Transistors MOSFET 30V 4.5A 6.5W 61mohm @ 10V | ||
| SIA810DJ-T1-GE3 | RF Bipolar Transistors MOSFET 20V 4.5A 6.5W 53mohm @ 4.5V | ||
| SIA813DJ-T1-GE3 | RF Bipolar Transistors MOSFET 20V 4.5A 6.5W 94mohm @ 4.5V | ||
| SIA527DJ-T1-GE3 | MOSFET N/P-CH 12V 4.5A SC-70-6 | ||
| SIA533EDJ-T1-GE3 | MOSFET N/P-CH 12V 4.5A SC70-6 | ||
| SIA537EDJ-T1-GE3 | MOSFET N/P-CH 12V/20V SC-70-6L | ||
| SIA777EDJ-T1-GE3 | MOSFET N/P-CH 20V/12V SC70-6L | ||
| SIA811ADJ-T1-GE3 | MOSFET P-CH 20V 4.5A PPAK SC70-6 | ||
| SIA811DJ-T1-E3 | MOSFET P-CH 20V 4.5A SC70-6 | ||
| SIA811DJ-T1-GE3 | MOSFET P-CH 20V 4.5A SC70-6 | ||
| SIA817EDJ-T1-GE3 | MOSFET P-CH 30V 4.5A SC-70-6 | ||
| SIA907EDJT-T1-GE3 | MOSFET 2P-CH 20V 4.5A SC-70-6L | ||
| SIA910EDJ-T1-GE3 | MOSFET 2N-CH 12V 4.5A SC-70-6 | ||
| SIA810DJ-T1-E3 | MOSFET N-CH 20V 4.5A SC-70-6 | ||
| SIA850DJ-T1-GE3 | MOSFET N-CH 190V 0.95A SC70-6 | ||
| SIA907EDJ-T1-GE3 | MOSFET N-CH 30V SMD | ||
| SIA907EDJ-T4-GE3 | MOSFET N-CH 30V SMD | ||
| SIA533EDJ-T1-GE3-CUT TAPE | Neu und Original | ||
| SIA910EDJ-T1-GE3-CUT TAPE | Neu und Original | ||
| SIA534DJ-E3 | Neu und Original | ||
| SIA63-CE | Neu und Original | ||
| SIA811ADJ-GE3 | Neu und Original | ||
| SIA811DJ-T1 | Neu und Original | ||
| SIA814DJ | Neu und Original | ||
| SIA8602 | Neu und Original | ||
| SIA903DJ | Neu und Original | ||
| SIA906EDJ-T1-E3 | Neu und Original | ||
| SIA906EDJ-T4-GE3 | Neu und Original | ||
| SIA907EDJT | Neu und Original | ||
| SIA907EDJT-T4-GE3 | Neu und Original | ||
| SIA5642 | Neu und Original | ||
| SIA811DJ | Neu und Original | ||
| SIA906EDJ | Neu und Original |