IXYS Corporation/Littelfuse announces the expansion of its XPT IGBT product line with the release of discrete high-speed, high-gain 1200 V products. These devices feature high current ratings (105 A - 160 A, Tc=25°C) and are specifically optimized for reduced switching losses in high-voltage applications that require hard-switching frequencies of up to 50 kHz. The high-speed switching capabilities of these 1200 V IGBTs allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter, and more cost-effective passive components.
Developed using IXYS XPTTM design platform, these new devices feature low collector to emitter saturation voltages (Vcesat as low as 3.0 V), low typical current fall times (tfi as low as 57 ns), and low turn-off energy per pulse values (Eoff as low as 1.2 mJ, Tj=25°C). In addition, these IGBTs retain a positive temperature coefficient of its collector to emitter saturation voltage for ease of parallel configuration, allowing designers to utilize multiple XPT discrete devices in parallel to achieve the desired high current requirements of their application. The low gate charge characteristics of these new devices also aid in the reduction in gate drive power requirements of the device, thus allowing the implementation of simple and more economical gate drive solutions.
Stichworte:Power ManagementSemiconductors & Dev ToolsIXYS