IXYS/Littelfuse Linear L2™ MOSFETs are a distinguished class of rugged Power MOSFETs tailored specifically for applications that require Power MOSFETs to operate in their current saturation region
By IXYS 1164
Promotes device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications.
By IXYS 1201
IXYS/Littelfuse has combined the latest silicon carbide diode technology with its advanced GenX3™ IGBT platform, enabling critical applications like switch mode power supplies.
By IXYS 1355
Allows for the development of more efficient power subsystems in applications such as high frequency inverters in power conversion and solar energy generation.
By IXYS 1461
Provides improved power efficiency and reliability for demanding high-voltage conversion systems that require bus voltage operation of up to 700 V.
By IXYS 1485
Available with blocking voltages between 500 V to 1000 V, on-resistance (Rdson) as low as 500 mΩ (max), and drain current ratings of up to 6 A.
By IXYS 1134
Tailored to address market demands for highly rugged, low loss semiconductor devices that offer the ability to be easily configured in parallel.
By IXYS 1368
Linear Technology's LT3090 is a low-dropout negative linear regulator that is easily parallelable to increase output current or spread heat on surface-mounted boards.
By Analog Devices Inc 620
NXP’s TEA172x family is a series of small, low-cost module switched mode power supply (SMPS) that are tailored for low-power applications up to 5 W or 11 W.
By NXP Semiconductors 1110
PolarP3™ power MOSFETs feature low on-state resistance (Rdson) and gate charge (Qg). Available in two voltage grades of 500 V and 600 V grade.
By IXYS 1284
Provides designers with the ability to reduce or eliminate multiple paralleled lower current rated MOSFET devices in high power switching applications.
By IXYS 1289
IRFH7185TRPbF 100 V FastIRFET delivers benchmark performance in power supply applications.
By Infineon Technologies 921
NXP's next-gen GreenChip device enables low current consumption, high efficiency, and reduces the BOM.
By NXP Semiconductors 972
AD531x, AD568x, and AD569x nanoDAC® are quad 10-, 12-, and 16-bit 3 V/5 D/A converters in TSSOP packages.
By Analog Devices Inc 732
The TI ADS8319 ADC's power consumption is directly scaled with speed, making it optimized for low power consumption for low speed applications.
By Texas Instruments 916
Vishay's MOSFET provides higher isolation and VIORM and VIOTM creepage and clearance distances for industrial control and power conversion applications.
By Vishay Semiconductor / Opto Division 1056
The complete switching power stage, from ON Semiconductor, is optimized for driver and MOSFET dynamic performance, system inductance, and power MOSFET RDS(ON).
By ON Semiconductor 1262
ON Semiconductor's SuperFET II series is optimized for high-efficiency in high-frequency switching applications.
By ON Semiconductor 904
Design is based on the WPC-A11 transmitter definition, comprising of a 5 VDC input source, full-bridge inverter topology and frequency-control methodology
By NXP Semiconductors 1129
Rectifiers from Vishay offer high current density and low forward voltage drop, which reduce power loss and improve efficiency.
By Vishay Semiconductor/Diodes Division 1208